? 2013 ixys corporation, all rights reserved xpt tm 600v igbt genx3 tm w/ diode IXXH75N60C3D1 v ces = 600v i c110 = 75a v ce(sat) 2.3v t fi(typ) = 75ns ds100330c(01/13) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab extreme light punch through igbt for 20-60 khz switching features z optimized for 20-60khz switching z square rbsoa z anti-parallel ultra fast diode z avalanche capability z short circuit capability z international standard package advantages z high power density z 175c rated z extremely rugged z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 150 c 3 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.85 2.30 v t j = 150 c 2.30 v symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 150 a i c110 t c = 110c 75 a i f110 t c = 110c 30 a i cm t c = 25c, 1ms 300 a i a t c = 25c 30 a e as t c = 25c 500 mj ssoa v ge = 15v, t vj = 150c, r g = 5 i cm = 150 a (rbsoa) clamped inductive load @v ce v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 22 , non repetitive p c t c = 25c 750 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g
ixys reserves the right to change limits, test conditions, and dimensions. IXXH75N60C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ? p to-247 (ixxh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.7 v t j = 150c 1.6 v i rm t j = 100c 4 a t rr t j = 100c 100 ns 25 ns r thjc 0.90c/w i f = 30a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 20 33 s c ie s 3300 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 195 pf c res 63 pf q g(on) 107 nc q ge i c = 75a, v ge = 15v, v ce = 0.5 ? v ces 28 nc q gc 46 nc t d(on) 35 ns t ri 75 ns e on 1.60 mj t d(off) 90 130 ns t fi 75 ns e of f 0.80 1.40 mj t d(on) 33 ns t ri 72 ns e on 2.50 mj t d(off) 105 ns t fi 80 ns e off 1.07 mj r thjc 0.20 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 60a, v ge = 15v v ce = 400v, r g = 5 note 2 inductive load, t j = 150c i c = 60a, v ge = 15v v ce = 400v, r g = 5 note 2
? 2013 ixys corporation, all rights reserved IXXH75N60C3D1 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 01234 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 8v 7v 12v 9v 11v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 012345 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 12v 9v 11v 8v 6v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 75a i c = 37.5a i c = 150a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 150 a t j = 25oc 75 a 37.5 a fig. 6. input admittance 0 20 40 60 80 100 120 456789101112 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH75N60C3D1 fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. maximum transient thermal impedance aasss 0.4 fig. 7. transconductance 0 10 20 30 40 50 0 20 40 60 80 100 120 i c - amperes g f s - siemens t j = - 40oc, 25oc, 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 100 200 300 400 500 600 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100110 q g - nanocoulombs v ge - volts v ce = 300v i c = 75a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXXH75N60C3D1 fig. 12. inductive switching energy loss vs. gate resistance 0 0.5 1 1.5 2 2.5 3 3.5 4 5 10152025303540455055 r g - ohms e off - millijoules 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 50 60 70 80 90 100 110 120 130 140 5 10152025303540455055 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 350 400 450 500 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 13. inductive switching energy loss vs. collector current 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes e off - millijoules 0 0.5 1 1.5 2 2.5 3 3.5 4 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 50 70 90 110 130 150 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t f i - nanoseconds 70 90 110 130 150 170 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 65 70 75 80 85 90 95 100 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 70 80 90 100 110 120 130 140 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 80a i c = 40a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH75N60C3D1 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t r i - nanoseconds 27 29 31 33 35 37 39 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 28 30 32 34 36 38 40 42 44 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 80a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 5 101520253035404550 r g - ohms t r i - nanoseconds 20 40 60 80 100 120 140 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 80a i c = 40a
? 2013 ixys corporation, all rights reserved IXXH75N60C3D1 ixys ref: ixx_75n60c3(71)05-03-11 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 04080120160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06 t vj = 100c v r = 300v t vj = 100c i f = 30a q r i rm fig. 25. recovery time t rr versus -di f /dt fig. 26. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 27. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 fig. 24. dynamic parameters q r , i rm versus t vj i f = 60a i f = 30a i f = 15a fig. 23. peak reverse current i rm versus -di f /dt fig. 22. reverse recovery charge q r versus -di f /dt fig. 21. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a t vj = 25c t vj =100c t vj =150c
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